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PHOTOMULTlPLlER TUBES
R7446 R7446P (For Photon Counting)
High Cathode Sensitivity with Low Noise Photocathode
FEATURES
Spectral Response ..................................... 160 to 680 nm Cathode Sensitivity Luminous ........................................................ 60 A/lm Radiant at 400nm ............................................ 60 mA/W Anode Sensitivity (at 1000V) Luminous ......................................................... 400 A/lm Radiant at 400nm ..................................... 4.0 x 105 A/W Low Dark Current .................................................... 0.1 nA Low Dark Counts (R7446P) .................................... 10 cps
APPLICATIONS
Environmental Monitoring Atomic Emission Spectrometer Atomic Absorption Spectrometer
GENERAL
Parameter
Spectral Response Wavelength of Maximum Response Photocathode MateriaI Minimum Effective Area Window Material Dynode Secondary Emitting Surface Structure Number of Stages Direct Interelectrode Capacitances Anode to Last Dynode Anode to All Other Electrodes Base Weight SuitabIe Socket SuitabIe Socket Assembly
Figure 1: Typical Spectral Response
Description/Vaiue Unit
160 to 680 400 Low noise bialkali 8 x 24 Fused Silica Low noise bialkali Circular-cage 9 4 6 11-pin base JEDEC No. B11-88 45 E678-11A (option) E717-63 (option)
0.01 100 200 300 400 500 600 700 800 100
TPMSB0193EA
nm nm
CATODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%)
mm
10 CATHODE RADIANT SENCITIVITY
1 QUANTUM EFFICIENCY
pF pF
0.1
g
WAVELENGTH (nm)
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)1999 Hamamatsu Photonics K.K
PHOTOMULTlPLlER TUBES R7446, R7446P (For Photon Counting)
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Supply Voltage Between Anode and Cathode Between Anode and Last Dynode Average Anode Current Ambient Temperature 1250 250 0.1 -80 to +50 Vdc Vdc mA C
Value
Unit
CHARACTERISTlCS (at 25 C)
Parameter
Cathode Sensitivity Quantum Efficiency at 300nm (Peak) LuminousB Radiant at 400nm (Peak) BlueC Anode Sensitivity LuminousD Radiant at 400nm GainE Anode Dark After 30minute Storage in the darkness Anode Dark CountsF ENI(Equivalent Noise Input)G Time ResponseD Anode Pulse Rise TimeH Electron Transit TimeJ Transit Time Spread (TTS)K Anode Current StabilityL Current Hysteresis Voltage Hysteresis Current E
R7446 for General Purpose Min. Typ.
20 60 60 6.4 400 4.0 x 105 6.7 x 106 0.1 3.7 x 10-17 2.2 22 1.2 0.1 1.0 2.0
R7446P for Photon Counting Min. Typ.
20 60 60 6.4 400 4.0 x 105 6.7 x 106 0.1 10 3.7 x 10-17 2.2 22 1.2 0.1 1.0 0.5 50 nA cps W ns ns ns % %
Max.
Max.
Unit
% A/lm mA/W A/lm-b A/lm A/W
40
40
200
200
NOTES
A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 150 volts between the cathode and all other electrodes connected together as anode. C: The value is cathode output current when a blue filter(Corning CS-5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. D: Measured with the same light source as Note B and with the anode-tocathode supply voltage and voltage distribution ratio shown in Table 1 below. E: Measured with the same supply voltage and voltage distribution ratio as Note D after removal of light. F: Measured at the voltage producing the gain of 1 x 106. G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G. f
K: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. L: Hysteresis is temporary instability in anode current after light and voltage are applied. Hysteresis = lmax. li lmin. x 100(%)
ANODE CURRENT
li
l max. l min. TIME
0
5
6
7 (minutes)
TPMSB0002EA
S q = Electronic charge (1.60 x 10-19 coulomb). ldb = Anode dark current(after 30 minute storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response.
(1)Current Hysteresis The tube is operated at 750 volts with an anode current of 1 micro-ampere for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2)Voltage Hysteresis The tube is operated at 300 volts with an anode current of 0.1 micro-ampere for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 volts. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Table 1:Voltage Distribution Ratio
Electrode Distribution Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P
H: The rise time is the time for the output pulse to rise from 10% to 90% of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. J: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitube. In measurement, the whole photocathode is illuminated.
SuppIy Voltage : 1000Vdc K : Cathode, Dy : Dynode,
P : Anode
Figure 2: Typical Gain and Anode Dark Current
TPMSB0026EA
Figure 3: Typical Time Response
TPMSB0004EB
10-5
108
100 80
10-6 ANODE DARK CURRENT (A) 10-7
G N AI
107 106
60 40
TRAN
SIT T
IME
20
TIME (ns)
GAIN
10-8 10-9
R CU R
105 104 103 102 101 1500
10 8 6 4
T EN
10-10 10-11 10-12 300
DE R DA
K
RISE
TIME
AN
O
2
400
500
600
800
1000
1
300
500
700
1000
1500
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
Figure 4: Typical ENI vs. Wavelength
TPMSB0194EA
Figure 5: Typical EADCI (Equivalent Anode Dark Current Input) vs. Supply Voltage
TPMSB0028EA
10-12
10-10
EQUIVALENT NOISE INPUT (W)
10-13
10-11
EADCI (lm)
10-14
10-12
10-15
10-16
10-13
10-17 100
200
300
400
500
600
700
800
10-14 300
400
500
600
800
1000 1200
SUPPLY VOLTAGE (V)
WAVELENGTH (nm)
Data shown here, which is given from a relation among supply voltage, anode sensitivity and dark current, serves as a good reference in order to determine the most suitable supply voltage or its range.
Figure 6: Typical Single Photon Height Distribution for R7446P
1.0
TPMSB0195EA
Figure 7: Typical Temperature Characteristics of Dark Count for R7446P
104
TPMSB0030EA
FULL SCALE 104 (PHOTON+DARK) FULL SCALE 103 (DARK)
COUNT PER CHANNEL
0.8
0.6
DARK COUNT (cps)
WAVELENGTH OF INCIDENT LIGHT : 450 (nm) : 870 (V) SUPPLY VOLTAGE : 70 (ch) LOWER LEVEL DISCRI. : 5612 (cps) PHOTON + DARK COUNT : 10 (cps) DARK COUNT : 25 (C) TEMPERATURE
103
102
0.4 SIGNAL + DARK 0.2 DARK 0 200 400 600 800 1000
101
100
10-1 -20
0
+20
TEMPERATURE (C)
+40
+60
CHANNEL NUMBER (CH)
PHOTOMULTlPLlER TUBES R7446, R7446P (For Photon Counting)
Figure 8: Dimensional Outline and Basing Diagram(Unit: mm)
28.5 1.5
49 38
Figure 10: Socket E678-11A (Option)
8MIN. PHOTOCATHODE DY5 24MIN. DY4 4 80MAX. 94MAX. DY3 3 DY2 2 1 11 K
4
8 DY8
5
9 DY9 10 P
29
2.5
49.0
DY1
BOTTOM VIEW (BASING DIAGRAM)
32.2 0.5
TACCA0064EA
11 PIN BASE JEDEC No. B11-88
TPMSA0001EA
Figure 9: D Type Socket Assembly E717-63 (Option)
5 33.0 0.3 3.5 PMT P R10 DY9 38.0 0.3 49.0 0.3 DY7 29 4 DY6 DY5 30 +0 -1 DY4 31.0 0.5 HOUSING (INSULATOR) 450 10 POTTING COMPOUND DY3 DY2 DY1 K 3 R3 2 R2 1 R1 11 -HV AWG22 (VIOLET) 7 R7 6 5 4 R4 R6 R to R10 : 330 k C1 to C3 : 0.01 F R5 DY8 9 R9 8 R8 C1 C2 C3 SOCKET PIN No. 10 SIGNAL GND SIGNAL OUTPUT RG-174/U (BLACK) POWER SUPPLY GND AWG22 (BLACK)
TACCA0002EG
* Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply.
Warning-Personal Safety Hazards Electrical Shock-Operating voltages applied to this device present a shock hazard.
HOMEPAGE URL http://www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Center 314-5, Shimokanzo, Toyooka-village, Iwata-gun, Shizuoka-ken, 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 United Kingdom: Hamamatsu Photonics UK Limited: Lough Point, 2 Gladbeck Way, Windmill Hill, Enfield, Middlesex EN2 7JA, United Kingdom, Telephone: 44(20)8-367-3560, Fax: 44(20)8-367-6384 North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741
18
DIRECTION OF LIGHT
3.5
33
5
DY6 6
7
DY7
TPMS1068E01 OCT. 1999

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